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 Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC2564
DESCRIPTION With MT-200 package Complement to type 2SA1094 High transition frequency APPLICATIONS For power amplifier applications
PINNING(see Fig.2) PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (MT-200) and symbol DESCRIPTION
Absolute maximum ratings (Ta=25C)
SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg

PARAMETER
Collector-base voltage
INC
Collector-emitter voltage
E SEM ANG H
Open base
Open emitter
OND IC
CONDITIONS
TOR UC
VALUE 140 140 5 12 1.2
UNIT V V V A A W ae ae
Emitter-base voltage
Open collector
Collector current Base current Collectorl power dissipation Junction temperature Storage temperature TC=25ae
150 150 -55~150
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25ae unless otherwise specified PARAMETER Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter on voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency CONDITIONS IC=0.1A; IB=0 IE=10mA; IC=0 IC=5 A; IB=0.5 A IC=5A ; VCE=5V VCB=140V; IE=0 VEB=5V; IC=0 IC=1A ; VCE=5V IC=5A ; VCE=5V IC=1A ; VCE=10V 55 40 MIN 140 5 TYP.
2SC2564
SYMBOL V(BR)CEO V(BR)EBO VCEsat VBE ICBO IEBO hFE-1 hFE-2 fT
MAX
UNIT V V
2.0 2.0 50 50 240 |I |I
V V A A
hFE-1 classifications R 55-110 O
80-160

Y 120-240
CHA IN
E SEM NG
OND IC
TOR UC
80
MHz
2
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
2SC2564

CHA IN
E SEM NG
OND IC
TOR UC
Fig.2 Outline dimensions
3


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